inchange semiconductor isc product specification isc silicon npn power transistor BDY76 description excellent safe operating area high dc current gain- : h fe = 40~120@i c = 10a low saturation voltage- : v ce( sat )= 1.4v(max)@ i c = 10a applications designed for linear amplifiers, series pass regulators, and inductive switch ing applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v cex collector-emitter voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current-continuous 20 a i cm collector current-peak 30 a i b b base current-continuous 5 a p c collector power dissipation @t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.17 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDY76 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 200ma; i b = 0 60 v v (br)cer collector-emitter breakdown voltage i c = 200ma; r be =100 70 v v (br)cex collector-emitter breakdown voltage i c = 200ma; v be( off ) = 1.5v 80 v v ce (sat) collector-emitter saturation voltage i c = 10a; i b = 1a 1.4 v v be( on ) base-emitter on voltage i c = 10a; v ce = 4v 2.2 v i ceo collector cutoff current v ce = 50v; i b = 0 b 10 ma i cex collector cutoff current v ce = 100v; v be( off ) = 1.5v v ce = 30v; v be( off ) = 1.5v,t c =150 5.0 10 ma i cbo collector cutoff current v cb = 100v; i e = 0 v cb = 30v; i e = 0,t c =150 5.0 10 ma i ebo emitter cutoff current v eb = 7v; i c = 0 5.0 ma h fe dc current gain i c = 10a; v ce = 4v 40 120 f t current-gain?bandwidth product i c = 1a; v ce = 4v 0.8 mhz isc website www.iscsemi.cn 2
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